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| C-BAND MEDIUM POWER GaAs MESFET NE850R599A FEATURES * HIGH OUTPUT POWER: 0.5 W * HIGH LINEAR GAIN: 9.5 dB * HIGH EFFICIENCY (PAE): 38% * SUPERIOR INTERMODULATION DISTORTION * INDUSTRY STANDARD PACKAGING OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 99 5.20.3 1.00.1 4.0 MIN BOTH LEADS Gate 2.20.2 4.30.2 4.00.1 Source DESCRIPTION The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. Equivalent performance in a chip package can be obtained by using only 1 cell of the NE8500100 chip. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known. Drain 0.60.1 5.20.3 11.00.15 15.00.3 +.06 0.1 -.02 0.2 MAX 1.70.15 5.0 MAX 6.00.2 1.2 RECOMMENDED OPERATING LIMITS SYMBOLS VDS TCH GCOMP RG PARAMETERS Drain to Source Voltage Channel Temperature Gain Compression Gate Resistance UNITS MIN V C dB K 9 TYP MAX 10 130 3.0 1 ELECTRICAL CHARACTERISTICS (TC PART NUMBER PACKAGE OUTLINE SYMBOLS CHARACTERISTICS Power Out at Fixed Input Power Power Added Efficiency Drain Source Current Gate to Source Current Linear Gain Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance (channel to case) = 25C) NE850R599A 99 UNITS dBm % A mA dB mA V mS C/W 220 -3.0 150 60 -1.6 9.5 430 -1.0 MIN 25.5 TYP 26.5 38 140 1.6 PIN = 7 dBm2 VDS = 2.5 V; VGS = 0 V VDS = 2.5 V; IDS = 2 mA VDS = 2.5 V; IDS = IDSS MAX TEST CONDITIONS PIN = 18.5 dBm1 VDS = 10 V; IDSQ = 100 mA f = 7.2 GHz; RG = 1 K Functional Characteristics POUT ADD IDS IGS GL Electrical Characteristics IDSS VP gm RTH California Eastern Laboratories NE850R599A (TC= 25 C unless otherwise noted) SYMBOLS VDSX VGDX VGSX IDS IGS PT TCH TSTG ABSOLUTE MAXIMUM RATINGS1 PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V V mA mA W C C RATINGS 15 -18 -12 IDSS 3.0 3.0 175 -65 to +175 TYPICAL PERFORMANCE CURVES (TA = 25C) OUTPUT POWER vs. INPUT POWER VD = 10 V, f = 7.2 GHz ID = 100 mA set Rg = 1K Output Power, POUT (dBm) 30 POUT 25 ID (mA) ID 20 140 120 100 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 15 10 15 20 Input Power, PIN (dBm) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 01/14/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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